Research Scientist (RF/mmWave GaN device design and process integration) (NSTIC), IME Full-time

Research Scientist (RF/mmWave GaN Device Design And Process Integration) (NSTIC), IME

The National Semiconductor Translation and Innovation Centre (NSTIC) (GaN) seeks a candidate who be able to design RF GaN device based on theory and practical device simulations, as well as realize the actual device with good repeatability and uniformity in the professional cleanroom. Successful candidate should have depth knowledge on RF compound semiconductor device operation principle, proficient at semiconductor device simulator, good hands-on experience in device fabrication and process integrations, as well as systematic approaches/strategies to analyse the device characterization data to improve the performances.

Job Requirement

• PhD in Semiconductor Physics, Electrical Engineering or related areas.
• Proficiency in semiconductor device simulator. (e.g., Silvaco)
• Depth knowledge/theory on RF compound semiconductor device (GaN, GaAs) operating principle, material selection and structure design.
• Good hands-on experience in professional cleanroom for RF compound semiconductor fabrications, process integration.
• Good experience in at least one programming language. (Python/C++/Matlab)
• Experience with high power RF/mmWave GaN device characterization and modeling.
• Team spirit and problem solving ability.
• Excellent verbal and written communication skills.
• Good track of scientific publications in International journals and Peer-review conference.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Type of Employment: Full-Time

Work Location: Fusionopolis