Research Scientist (RF/mmWave GaN device large-signal characterization and modeling) (NSTIC), IME Full-time

Research Scientist (RF/mmWave GaN Device Large-Signal Characterization And Modeling) (NSTIC), IME

The National Semiconductor Translation and Innovation Centre (NSTIC) (GaN) seeks a candidate who can professionally use automation RF tools to test linear and nonlinear characteristics of RF GaN device as well as create the behavioral, empirical or physical models.

Successful candidate should have depth knowledge on RF compound semiconductor device operation principle, proficient hands-on experience at RF power device tests in automation, good hands-on experience in systematic approaches/strategies to analyze the device characterization data to create the device model compatible with the standard EDA platforms.

Job Requirement:

• PhD in Semiconductor Physics, Electrical Engineering or related areas.
• In-depth knowledge of III-V based FET model. (e.g., CFET, EEHEMT, Angelov, ASM, etc.) and parameter extraction methodologies.
• Good knowledge of RF on-wafer calibration and de-embedding theory and procedures.
• Professional hands-on experiences in Maury/Focus load pull system for on-wafer measurement.
• Good experience in at least one programming language. (Python/C++/Matlab)
• Team spirit and problem-solving ability.
• Excellent verbal and written communication skills.
• Good track of scientific publications in international journals and peer-review conferences.