Texas Institute for Electronics (TIE) is a transformative, well-funded semiconductor foundry venture combining the agility of a startup with the scale of a national initiative.
A key part of our mission is to advance the state of the art in 3D heterogeneous integration (3DHI), chiplet-based architectures, and multi-component microsystems- catalyzing breakthroughs across microelectronics, artificial intelligence, quantum computing, high-performance computing, and next-generation healthcare devices.
Backed by $1.4 billion in combined funding from DARPA, Texas state initiatives, and strategic partners, we are building foundational capabilities in advanced packaging and integrated design infrastructure to restore U.S. leadership in microelectronics manufacturing.
TIE's 3DHI and chiplet integration platforms integrate novel thermal management and advanced interconnect solutions to deliver unprecedented performance and energy efficiency. Operating at the intersection of defense electronics and commercial markets, TIE offers a rare opportunity to reimagine an industry from the ground up and build transformative products with global impact.
UT Austin, recognized by Forbes as one of America's Best Large Employers, provides outstanding employee benefits and total rewards packages that include:
Develop and validate multi-physics, silicon-calibrated TCAD models for 3DHI devices and interfaces to predict performance and reliability. Partners across teams and external vendors co-optimize designs, set modeling best practices, deliver reusable reference flows, and mentor engineers.
Ph.D. or M.S. in Electrical Engineering, Materials Science, Applied Physics, or a closely related field with strong emphasis on device physics and numerical simulation.
8+ years (Senior) or 12+ years (Principal) of hands-on experience with TCAD for semiconductor devices or interconnects.
Deep understanding of semiconductor device physics (MOSFETs, diodes, contacts) and transport mechanisms relevant to nanoscale and 3D structures.
Proficiency with commercial TCAD tools such as Synopsys Sentaurus, Silvaco Atlas/Victory, or equivalent multi-physics simulation environments.
Experience correlating TCAD models with silicon data and extracting physical parameters from measurements.
Strong background in process integration effects (doping, defects, interfaces, stress, and materials).
Ability to work cross-functionally with process, packaging, EDA, and system teams in a fast-moving R&D environment.
Relevant education and experience may be substituted as appropriate.
TIE pays industry-competitive salaries
Monday – Friday
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