Senior Process Engineer – SiC crystal growth by PVT (APM / NSTIC – GaN), IME Full-time

Senior Process Engineer – SiC Crystal Growth by PVT (APM / NSTIC – GaN), IME

We are seeking a talented and passionate Senior Process Engineer to join our silicon carbide (SiC) crystal growth team. The successful candidate will be responsible for developing crystal growth technologies, operating crystal growth tools, and supporting the production of semi-insulating SiC wafers used as substrates for RF and millimeter-wave GaN devices. This position is within the National Semiconductor Translation and Innovation Centre Gallium Nitride (NSTIC – GaN) program.

Responsibilities:

• Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices.
• Design, execute, and analyze SiC crystal growth experiments using Physical Vapor Transport (PVT) and related growth techniques.
• Characterize SiC crystals and wafers, including resistivity, defect density, crystal quality, and uniformity.
• Collaborate closely with device, epitaxy, and integration teams to ensure material performance meets device requirements.
• Troubleshoot processes and equipment to maintain tool performance and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Action Plans (OCAPs), SPC, FMEA and other technical documentation.
• Work with external vendors to control the wafering process and produce SiC wafers from SiC boules.
• Collaborate with equipment engineers to maintain PVT and supporting tools, ensuring tool uptime above 90%, and provide backup support for equipment maintenance activities.
• Document experimental results, prepare technical reports, and contribute to publications, patents, and project reviews.
• Prepare and deliver technical presentations for internal reviews, conferences, and journals.
• Support technology transfer and scale-up activities aligned with NSTIC – GaN program objectives.
• Perform other related duties as assigned.

Requirements:

• Bachelor's or Master's degree in Materials Science, Electrical Engineering, Physics, or a related discipline.
• 3 – 5 years of hands-on experience in silicon or silicon carbide (SiC) material growth.
• Strong background in semiconductor device physics and materials processing.
• Excellent communication skills, strong industry awareness, and proven problem-solving abilities.
• Highly motivated self-starter with the ability to work independently and collaboratively in a team environment.
• Prior industry experience is an advantage.