Doctoral student in Electrical Engineering focusing on wide bandgap semiconductor devices Full-time

Doctoral Student In Electrical Engineering Focusing On Wide Bandgap Semiconductor Devices

The position is based in the Division of Electromagnetics and Nanoelectronics at the Department of Electrical and Information Technology. The division comprises 15 senior researchers and approximately 20 doctoral students and maintains extensive collaboration with industry. Research activities span a broad range of topics, including semiconductor devices, nanotechnology, electronics and computational electromagnetics. We offer an open and collaborative working environment with excellent opportunities for professional development and a healthy work–life balance. The division provides strong opportunities for collaboration among researchers, doctoral students and industrial partners.

As a doctoral student, you are both admitted as a student and employed at Lund University. As a doctoral student, you will be trained in a scientific approach. In short, you will be trained to think critically and analytically, to solve problems independently using the right methods, and to develop an awareness of research ethics. In addition, you will have the opportunity to work on projects, to develop your leadership and pedagogical skills. Throughout your studies, you will be guided by supervisors. Doctoral studies end with a thesis and a doctoral degree.

The subject of this project is the fabrication and investigation of advanced transistors based on ultra-wide-bandgap semiconductor materials within the III-nitride material system. The project focuses on the development of AlGaN- and AlScN-based high-electron-mobility transistors (HEMTs) for both radio-frequency (RF) and power electronics applications.

You will work with device design and fabrication in a cleanroom environment, as well as electrical characterization and device modelling. The research will be conducted in close collaboration with other doctoral students working on nitride-based devices within the division, as well as experienced researchers in material growth and characterization at the Departments of Solid State Physics and Synchrotron Radiation Research.

You will primarily devote yourself to your doctoral programme, which includes participation in research projects as well as third cycle courses, seminars and conferences. Your research will focus on the fabrication and characterization of nitride-based HEMTs for RF and power electronics applications. Particular emphasis will be placed on the integration of advanced ultra-wide-bandgap materials, such as AlN and AlScN, to enhance device performance.

To be eligible for admission and employment as a doctoral student, you must fulfil the requirements below.

A person meets the general admission requirements for third-cycle courses and study programmes if the applicant:

• has been awarded a second-cycle qualification, or
• has satisfied the requirements for courses comprising at least 240 credits of which at least 60 credits were awarded in the second cycle, or
• has acquired substantially equivalent knowledge in some other way in Sweden or abroad.

A person meets the specific admission requirements for third cycle studies in Electrical Engineering if the applicant has:

• at least 60 second-cycle credits in subjects of relevance to Electrical Engineering, or
• a MSc in Engineering in Biomedical Engineering, Computer Science, Electrical Engineering, Engineering Mathematics, Nanoengineering, Engineering Physics, or Information and Communication Engineering.

In order to complete the doctoral programme in question, the following are also required:

• Good documented knowledge of semiconductor physics and/or semiconductor technology.
• A Master's degree, or equivalent, with specialization in semiconductor electronics, semiconductor physics, or a closely related field.
• Good ability to work independently and to formulate and tackle research problems.
• Good written and oral communication skills.
• Good ability to cooperate.
• Very good knowledge of English, spoken and written.

For the doctoral programme in question, the following are considered as other qualifications:

• Experience working in a cleanroom environment.
• Experience with GaN-based electronic devices.
• Experience with high-voltage or RF characterization and measurements of transistors.
• Experience with semiconductor device fabrication and/or modeling.

The employment is a fixed-term employment at full time, starting as soon as possible by agreement, however no later than December 31, 2026. Third cycle studies at LTH consist of full-time studies for 4 years. In the case of teaching and other departmental duties, the employment is extended accordingly. Doctoral studentships are regulated in the Higher Education Ordinance (1993:100), chapter 5, 1-7 §§. More about terms of employment for doctoral students on Lund University's Staffpages.

Applications shall be written in English and include:

• CV and a cover letter stating the reasons why you are interested in the doctoral programme/employment and in what way the research project corresponds to your interests and educational background.
• Copies of issued study certificates and/or awarded degree certificates. These must confirm that you meet the general and specific admission requirements for the doctoral programme and show that you have the subject knowledge required for the doctoral programme project.
• Other documents you wish to be considered (grade transcripts, contact information for your references, letters of recommendation, etc.)

We welcome your application.